SOT | 台灣精品獎-歷屆得獎名單
![SOT](https://i.imgur.com/DERULla.jpg)
SOT-MRAMdevicesfeatureswitchingofthefreemagneticlayerdonebyinjectinganin-planecurrentinanadjacentSOTlayer,unlikeSTT-MRAMwherethe ...
![SOT](https://i.imgur.com/DERULla.jpg)
Taiwans Industrial Technology Research Institute (ITRI) announced two new MRAM collaborations. The first one is with Taiwans TSMC, for the development of SOT-MRAM array chips. The second collaboration is with National Yang Ming Chiao Tung University (NYCU) to develop magnetic memory technology that can perform across a wide operating temperature range of nearly 400 degrees Celsius.
Together with TSMC, ITRI is developing low-voltage and current SOT-MRAM, that features high write efficiecny and low write voltage. ITRI says that its SOT-MRAM achieves a writing speed of 0.4 nanoseconds and a high endurance of 7 trillion reads and writes. The memory also offers a data storage lifespan of over 10 years.
SOT MRAM的原理與發展近況(二) | 台灣精品獎-歷屆得獎名單
SOT MRAM的原理與發展近況(一) | 台灣精品獎-歷屆得獎名單
非揮發性的磁性記憶體 | 台灣精品獎-歷屆得獎名單
突破技術侷限新一代MRAM放眼更廣泛應用 | 台灣精品獎-歷屆得獎名單
鞏固半導體!繼英特爾後我國成功開發SOT | 台灣精品獎-歷屆得獎名單
SOT | 台灣精品獎-歷屆得獎名單
Comparative analysis of STT and SOT based MRAMs for last ... | 台灣精品獎-歷屆得獎名單
Performance Comparison of Single Level STT and SOT ... | 台灣精品獎-歷屆得獎名單
![](https://i.imgur.com/DERULla.jpg)
105 年度台灣精品獎獲獎產品 輪胎脫困得力帶
由「凱士士企業股份有限公司」生產的輪胎脫困得力帶獲得105年度台灣精品獎,以下為此獎項詳細資料整理:得獎產品:輪胎脫困...