Sot device | 台灣精品獎-歷屆得獎名單
由SCouet著作·2021·被引用3次—Spinorbittorque-MRAMdevicesarepromisingbothforhighperformancecachereplacementandforlowpowerneuralnetworksrequiringnon-volatileweights, ...,Spin-orbittorques(SOT)provideaversatiletooltomanipulatethemagnetizationofdiverseclassesofmaterialsanddevicesusingelectriccurrents,leading ...,購買FTZ30ET148-Rohm-ESDProtectionDevice,SOT-25,5Pins,200mW。e络盟提供優惠價格、當日出貨、快速運送、充分庫存、資料表與技術支援。,SOT-MRAMdevicesfeatureswitchingofthefreemagneticlayerdoneby...
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BEOL compatible high retention perpendicular SOT | 台灣精品獎-歷屆得獎名單
由 S Couet 著作 · 2021 · 被引用 3 次 — Spin orbit torque-MRAM devices are promising both for high performance cache replacement and for low power neural networks requiring non-volatile weights, ... Read More
Characterization of two | 台灣精品獎-歷屆得獎名單
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading ... Read More
ESD Protection Device, SOT-25 | 台灣精品獎-歷屆得獎名單
購買FTZ30ET148 - Rohm - ESD Protection Device, SOT-25, 5 Pins, 200 mW。e络盟提供優惠價格、當日出貨、快速運送、充分庫存、資料表與技術支援。 Read More
SOT | 台灣精品獎-歷屆得獎名單
SOT-MRAM devices feature switching of the free magnetic layer done by injecting an in-plane current in an adjacent SOT layer, unlike STT-MRAM where the ... Read More
SOT | 台灣精品獎-歷屆得獎名單
由 K Garello 著作 · 2018 · 被引用 80 次 — using CMOS-compatible processes for spin-orbit torque (SOT)-. MRAM architectures. We show that 62 nm devices with a W- based SOT underlayer have very large ... Read More
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